AR™ 254 is an organic, thermally cross-linking bottom anti-reflectant for 248 nm (KrF) photoresist. It has excellent gap filling and planarizing properties that are key requirements for advanced semiconductor devices having FinFET structures. AR™ 254 has a high etch rate to reduce substrate damage and optimal optical parameters to minimize reflectance.
Solution
- Anti-Reflectants & Functional Sublayer
Features & benefits
- Excellent planarizing property to minimize thickness gap on various pattern density
- Excellent resist CD and profile control on topography
- Good gap fill property at extremely narrow trench
- High etch rate to minimize etch bias and substrate damage
- Increases process margin
- Optimal n & k values
- Reduces substrate damage due to high etch rate
- Excellent planarizing property to minimize thickness gap on various pattern density
- Excellent resist CD and profile control on topography
- Good gap fill property at extremely narrow trench
- High etch rate to minimize etch bias and substrate damage
- Increases process margin
- Optimal n & k values
- Reduces substrate damage due to high etch rate
Available Sizes
| Gross Weight | Net Weight | Carton Each | Carton Length | Carton Weight | Carton Height |
|---|---|---|---|---|---|
| 757 | 0 | 0 | 0 | ||
| 757 | 0 | 0 | 0 | ||
| 757 | 0 | 0 | 0 |
Product Details
|
Fabric/material |
ARCS |
|---|---|
| Design | AR254-1000 DUV |
| Seam | AR254-1000 DUV ANTI-REFLECTANT |
| Packaging | ARCS |
| Hazard | |
| Coated Material | ARCS |
| Features | ARCS |
