Eon™ photoresists for EUV
Eon™ photoresists for extreme ultraviolet (EUV) lithography provide robust, high-resolution patterning for contact hole and line and space features, optimized specifically for next-generation DRAM memory and logic EUV manufacturing processes.
Features & Benefits
- High resolution capability (<36P line/space and <45P contact hole) with excellent line width roughness (LWR)/critical dimension uniformity (CDU)
- Wide process window with good etch resistance
- Outstanding stochastic post-etch/blob defect control
Applications
Eon™ photoresists are designed for fabrication of critical features in advanced logic and memory devices.
Featured products
- Eon™ 1040 EUV photoresist
- Eon™ 2070 EUV photoresist
